Toshiba Develops SiC MOSFET with Embedded Schottky Barrier Diode
Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect transistor (MOSFET) that arranges embedded Schottky barrier diodes (SBD) in a check pattern (check-pattern embedded SBD) to realize both low on-resistance and high reliability. Toshiba has confirmed that the design secures an approximately 20% reduction in on-resistance (RonA) against […]
