Toshiba Develops SiC MOSFET with Embedded Schottky Barrier Diode

Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect transistor (MOSFET) that arranges embedded Schottky barrier diodes (SBD) in a check pattern (check-pattern embedded SBD) to realize both low on-resistance and high reliability. Toshiba has confirmed that the design secures an approximately 20% reduction in on-resistance (RonA) against […]

Toshiba Materials to invest for increasing capacity of Silicon Nitride Ball Production

Toshiba Materials Co., Ltd. (President: Katsuaki Aoki) recently announced a major investment in a new manufacturing facility for silicon nitride balls on the same site as its headquarters in Yokohama, Japan. The project has a budget of over 5-billion yen (approx. USD38 million) and is expected to see production start in November 2023. It will increase […]

Toshiba upgrades Line-up of Ethernet bridge ICs to support AICS & Industrial Equipment

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has added “TC9563XBG” to its line-up of Ethernet bridge ICs, to provide support for 10Gbps communications in automotive information communications systems and industrial equipment. Sample shipments have started and volume production will start in August 2022. Automotive networks are evolving toward zone architecture[1], where communications between zones use […]