Kioxia Corporation, one of the world leaders in memory solutions, on July 8th announced that it has begun sampling new Universal Flash Storage (UFS) Ver. 4.1 Embedded memory devices, reinforcing its leadership in high-performance storage. Engineered to meet the demands of next-generation mobile applications, including advanced smartphones with on-device AI, the new devices offer improved performance with greater power efficiency in a small BGA package.
UFS Ver. 4.1 Devices from Kioxia integrate the company’s innovative BiCS FLASH 3D flash memory and a controller in a JEDEC-standard package. These new UFS devices are built with Kioxia’s 8th-generation BiCS FLASH 3D flash memory. This generation introduces CBA (CMOS directly Bonded to Array) technology—an architectural innovation that marks a step-change in flash memory design. By directly bonding the CMOS circuitry to the memory array, CBA technology enables major gains in power efficiency, performance and density.
With a blend of speed and low power use, Kioxia’s UFS Ver. 4.1 devices are built to enhance user experiences, enabling faster downloads and smoother app performance.
Key Features include:
- Available in capacities of 256 gigabytes (GB), 512 GB and 1 terabyte (TB)
- Performance improvement over the previous generation:
- Random writes: 512 GB / 1 TB approx. +30%
- Random reads: 512 GB approx. +45%, 1 TB approx. +35%
- Power efficiency improvement over the previous generation:
- Reads: 512 GB / 1 TB approx. +15% improvement
- Writes: 512 GB / 1 TB approx. +20% improvement
- Host-initiated defragmentation enables delayed garbage collection for uninterrupted fast performance during critical times
- WriteBooster buffer resizing provides better flexibility for optimal performance
- Support of the UFS Ver. 4.1 standard
- Reduced package height for the 1 TB model compared to the prior generation
- Uses Kioxia’s 8th generation BiCS FLASH 3D flash memory
For more information, visit Kioxia’s official website.
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