Kioxia Corporation, one of the leaders in memory solutions, announced on January 27 that it has begun sampling new Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices with 4-bit-per-cell, quadruple-level cell (QLC) technology. Designed for read-intensive applications and high-capacity storage needs, the new devices are powered by Kioxia’s 8th-generation BiCS FLASH 3D flash memory technology.
QLC UFS offers a higher bit density than traditional TLC UFS, making it suitable for mobile applications that require higher storage capacities. Advancements in controller technology and error correction have enabled QLC technology to achieve this while maintaining competitive performance.
Building on these advancements, the new Kioxia devices achieve substantial performance increases. Kioxia’s QLC UFS boosts sequential write speeds by 25%, random read speeds by 90%, and random write speeds by 95% compared to the previous generation (UFS 4.0 / BiCS FLASH6 QLC UFS). Write Amplification Factor (WAF) is also improved by max. 3.5× (with WriteBooster disabled).
Well-suited for smartphones and tablets, Kioxia QLC UFS also supports emerging product categories that demand higher capacity and performance, including PCs, networking, AR/VR, IoT, and AI-enabled devices.
Available in 512-gigabyte (GB) and 1-terabyte (TB) capacities, the new UFS 4.1 devices combine Kioxia’s advanced BiCS FLASH™ 3D flash memory and an integrated controller in a JEDEC-standard package. Kioxia’s 8th generation BiCS FLASH™ 3D flash memory introduces CMOS directly Bonded to Array (CBA) technology – an architectural innovation that marks a step-change in flash memory design.
Key features include:
- Compliant with the UFS 4.1 specification. UFS 4.1 is backwards-compatible with UFS 4.0 and UFS 3.1.
- 8th generation Kioxia BiCS FLASH 3D flash memory
- WriteBooster supports significantly faster write speeds
- Reduced package size compared to the previous QLC UFS: 11×13 mm to 9×13 mm
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