Sandisk Corporation announced on July 2nd it is sampling its BiCS10 1Tb TLC, its 10th-generation 3D NAND flash memory technology. BiCS10 applies advanced lateral scaling techniques to achieve industry-leading 1Tb TLC memory density greater than 29Gb/mm2, improving bit density by 59 percent while delivering up to 4.8Gb/s interface speed, a 33 percent improvement compared with 8th generation 3D flash memory currently in mass production.
Built on Sandisk’s proven Bit-Cost Scalable (BiCS) 3D NAND architecture and CMOS directly Bonded to Array (CBA) technology, BiCS10 TLC also enhances data input/output power efficiency, reducing power consumption by 10 percent for input and 34 percent for output compared to the previous BiCS8 generation.
“As the world becomes more connected, data-intensive and intelligent, NAND plays an increasingly mission-critical role in delivering the performance, efficiency and scale modern computing requires,” said Alper Ilkbahar, CTO at Sandisk. “BiCS8 set a new benchmark for 3D NAND by combining our wafer bonding capabilities with meaningful gains in density, performance, and efficiency. With BiCS10 TLC, we build upon that proven foundation to deliver faster interface speeds, higher bit density and improved power efficiency for our customers.”
NAND flash memory is one of the most scalable semiconductor technologies today, and the foundation of what Sandisk builds. BiCS10 advances Sandisk’s long-term roadmap for scaling NAND through continued innovation in density, power efficiency, and architecture. It builds upon Sandisk’s CBA technology, which fabricates CMOS logic and the memory array on separate wafers before bonding them together with high-precision wafer-to-wafer alignment. BiCS10 TLC increases the number of memory layers to 332 and incorporates Toggle DDR6.0, SCA protocol and PI-LTT technology to support high-speed, low-power operation.
The sampling milestone extends Sandisk’s BiCS roadmap with advancements that push density, power efficiency, and endurance in ways designed to support the next generation of data-intensive and AI-driven workloads. Key BiCS10 TLC technology highlights include:
- Up to 4.8Gb/s NAND interface speed, a 33 percent improvement.
- 332 memory layers with optimized floor plan efficiency, improving bit density by 59 percent.
- Enhanced data input/output power efficiency, reducing power consumption by 10 percent for input and 34 percent for output.
- Support for Toggle DDR6.0, SCA protocol and PI-LTT technology to enable high-speed, low-power operation.
Sandisk leads the way in flash innovation, from increasing bits per cell over time to advancing technologies in controller architecture, firmware, packaging, and system flash that improve the performance, efficiency, and utility of flash at scale. With a unique portfolio of leading IP and global manufacturing footprint, Sandisk controls its entire production lifecycle from design to manufacturing to final assembly with global operations, resulting in exceptional quality control, cost efficiency, faster time to market, and strong supply chain resilience.
