Toshiba Introduces 3300V SiC MOSFET Module with High Surge Capability
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) recently has expanded its lineup with the launch of “IX800FXF2YMS4,” a dual SiC MOSFET module for industrial equipment, including railway vehicles, renewable energy power generation systems and power conversion systems. The new module features Toshiba’s third-generation silicon carbide (SiC) MOSFET chips, a drain-source voltage rating of 3300V and […]